Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy.

We have performed a real-time in situ x-ray scattering study of the nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy on AlN(0001)/Si(111). The intensity variation of the GaN diffraction peak as a function of time was found to exhibit three different regimes: (i) the deposition of a wetting layer, which is followed by (ii) a supralinear regime assigned to nucleation of...

Low temperature growth of highly doped GaAs:Si by atomic layer molecular beam epitaxy

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Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown ...

Growth and investigation of AlN/GaN and (Al,In)N/GaN based Bragg reflectors

In this work we investigate the synthesis of Bragg reflectors consisting either of AlN/GaN or of (Al,In)N/GaN by plasma-assisted molecular beam epitaxy (MBE). In addition, we study the impact of Si-doping on the surface morphology and the structural and electrical properties of AlN/GaN Bragg reflectors in order investigate the feasibility of obtaining vertically conducting Bragg mirrors. The st...

Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy